The thermal stability dependence on states for multi-state magnetic random access memory (MRAM) was examined. In order to investigate the thermal stability, samples with structure of Ta2nm/ NiFe2nm/ CoFe1nm/ NiFe2nm/ IrMn4nm/ Ta5nm were sputtered using the UHV sputtering system. The results showed that thermal stability was different for different annealing temperatures which means MRAM thermal stability was different for different heating currents.
ASJC Scopus subject areas
- Electrical and Electronic Engineering