Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

Aftab M. Hussain, Hossain M. Fahad, Galo T. Sevilla, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)966-970
Number of pages5
Journalphysica status solidi (RRL) - Rapid Research Letters
Volume7
Issue number11
DOIs
StatePublished - Aug 16 2013

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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