Thermal oxidation of Ni films for p-type thin-film transistors

Jie Jiang, Xinghui Wang, Qing Zhang, Jingqi Li, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.
Original languageEnglish (US)
Pages (from-to)6875
JournalPhysical Chemistry Chemical Physics
Volume15
Issue number18
DOIs
StatePublished - 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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