Thermal Annealing induced relaxation of compressive strain in porous GaN structures

Ahmed Ben Slimane, Adel Najar, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
Original languageEnglish (US)
Title of host publicationIEEE Photonics Conference 2012
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages921-922
Number of pages2
ISBN (Print)978-1-4577-0731-5
DOIs
StatePublished - Dec 1 2012

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