Thermal annealing effects on a representative high-k/metal film stack

Muhammad Mustafa Hussain*, M. A. Quevedo-Lopez, Husam Niman Alshareef, H. C. Wen, D. Larison, B. Gnade, M. El-Bouanani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A high-k/metal film stack in a conventional complementary metal oxide semiconductor (CMOS) flow is a key candidate in the semiconductor industry for replacing the existing poly-silicon gate and silicon dioxide (SiO2) gate dielectric to reduce poly depletion and gate leakage. During conventional CMOS integration, the high-k/metal film stack is exposed to a high thermal budget process. In this work, an atomic layer deposition (ALD)-based hafnium oxide (HfO2)/titanium nitride (TiN) film stack (representative of the high-k/metal film stack) was annealed at 1000 °C to determine any change in the physical and electrical properties, such as thickness, surface roughness, density, sheet resistance, refractive index, extinction coefficient, composition, C-V characteristics, work function and etch rate. Although there was no significant electrical impact, some significant physical changes have been observed, which impact the process of integrating high-k/metal film stacks, especially in dual metal gate CMOSs.

Original languageEnglish (US)
Article number012
Pages (from-to)1437-1440
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number10
DOIs
StatePublished - Oct 10 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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