Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Udo Schwingenschlögl, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.
Original languageEnglish (US)
Title of host publication2011 Numerical Simulation of Optoelectronic Devices
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages149-150
Number of pages2
ISBN (Print)9781612848785
DOIs
StatePublished - Sep 2011

Fingerprint Dive into the research topics of 'Theoretical observation of two state lasing from InAs/InP quantum-dash lasers'. Together they form a unique fingerprint.

Cite this