Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications

Md Mahbub Satter, Yuh Shiuan Liu, Tsung Ting Kao, Zachary Lochner, Xiaohang Li, Jae Hyun Ryou, Shyh Chiang Shen, Theeradetch Detchprohm, Russell D. Dupuis, P. Douglas Yoder*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Achieving high p-type conductivity is one of the most significant bottlenecks to the efficient operation of wurtzite III-N based optoelectronic and microelectronic devices. Through judicious volumetric redistribution of fixed negative polarization charge, compositionally graded layers may be exploited to achieve nearly flat valence band profiles free from electrostatic barriers to hole injection into the active region. This may potentially ameliorate problems associated with poor p-type conductivity and inefficient hole transport that complicates the design of DUV laser diodes and light emitting diodes.

Original languageEnglish (US)
Pages (from-to)828-831
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume11
Issue number3-4
DOIs
StatePublished - Apr 2014

Keywords

  • Deep ultraviolet
  • Gallium nitride
  • Laser diode
  • Numerical simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

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