The physical mechanisms, that accounted for the difference between the secondary ion mass spectroscopy (SIMS) nitrogen composition and the x-ray diffraction (XRD) nitrogen composition of the GaAsN materials, were discussed. It was found that as long as all the nitrogen atoms in the GaAsN alloys were located at the substitutional arsenic sites, Vegard's law remained valid. The results show that the N-N pairs were the predominant nitrogen-related defects. They cause deviation from the GaAsN lattice constant as predicted by Vegard's law.
ASJC Scopus subject areas
- Physics and Astronomy(all)