The photovoltaic response in poly(p-phenylene vinylene) thin-film devices

R. N. Marks, J. J.M. Halls, D. D.C. Bradley, R. H. Friend, A. B. Holmes

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Abstract

We report measurements of the photovoltaic effect in diode structures formed with thin films (100 nm) of the conjugated polymer poly(p-phenylene vinylene), PPV, sandwiched between electrodes of indium/tin oxide, ITO, and either aluminium, magnesium or calcium. Under illumination incident through the ITO contact, large open-circuit voltages were measured, which saturated at approximately 1.2 V for Al and Mg devices, and approximately 1.7 V for Ca devices. Quantum efficiencies (short-circuit current/incident photon flux) of order 1% were measured at low intensities (0.1 mW cm-2). The spectral response of the photocurrent demonstrates that photon absorption near the electron-collecting electrode optimizes the photocurrent, indicating that device performance is limited by low electron mobilities in the bulk PPV. The photocurrent exhibits a weak temperature dependence, with an activation energy that is a function of the electric field in the polymer. We have used these measurements to estimate an exciton binding energy in PPV of approximately 0.4 eV.
Original languageEnglish (US)
JournalJournal of Physics: Condensed Matter
Volume6
Issue number7
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

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