The origin of the pseudogap in α-Ga

Zhiyong Zhu, Yingchun Cheng, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.
Original languageEnglish (US)
Pages (from-to)475502
JournalJournal of Physics: Condensed Matter
Volume23
Issue number47
DOIs
StatePublished - Nov 10 2011

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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