The mean inner potential of GaN measured from nanowires using off-axis electron holography

Andrew S W Wong*, Ghim W. Ho, Rafal Dunin-Borkowski, Takeshi Kasama, Rachel A. Oliver, Pedro M F J Costa, Colin J. Humphreys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The mean inner potentials of wurtzite GaN nanowires are measured using off-axis electron holography in the transmission electron microscope (TEM). The nanowires have a circular cross-section and are suspended across holes in a holey carbon film, resulting in an accurate knowledge of their thickness profiles and orientations. They are also free of the implantation and damage that is present in mechanically-polished ion-milled TEM specimens. The effect of a thin amorphous coating, which is present on the surfaces of the nanowires, on measurements of their mean inner potential is assessed. A value for the mean inner potential of GaN of (16.7± 0.3) V is obtained from these samples.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages209-214
Number of pages6
Volume892
StatePublished - 2006
Externally publishedYes
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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