The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride

H. F.W. Dekkers*, F. Duerinckx, Stefaan De Wolf, G. Agostinelli, J. Szlufcik

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Bulk and surface passivating properties of low frequency direct PECVD SiNx:H were investigated on 0.5-1 Ωcm p-type mc-Si material. It is observed that bulk passivation is preserved for different SiNx:H layers, deposited in a wide range of gas flow ratio and power. This allows optimisation of the layer composition towards rear surface passivation of mc-Si, while maintaining the bulk passivation. Lifetime measurements showed that a thermal treatment of SiNx:H leads to a lower minority carrier trapping density in the mc-Si bulk. Also a strong effect of the surface condition on the surface passivation was found. Different surface conditions have a strong impact on blister formation, which are possibly related to the diffusion mechanism of hydrogen from SiNx:H into the mc-Si bulk.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1143-1146
Number of pages4
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period05/11/0305/18/03

ASJC Scopus subject areas

  • Engineering(all)

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