We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.
|Original language||English (US)|
|Title of host publication||7th International Symposium on High-capacity Optical Networks and Enabling Technologies|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||3|
|State||Published - Dec 2010|