The influence of nonequilibrium distribution on room-temperature lasing spectra in quantum-dash lasers

C. L. Tan, H. S. Djie, Y. Wang, C. E. Dimas, V. Hongpinyo, Y. H. Ding, Boon Ooi

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

Original languageEnglish (US)
Pages (from-to)30-32
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number1
DOIs
StatePublished - Dec 1 2009

Keywords

  • Nonequilibrium distribution
  • Quantum-dash (Qdash)
  • Quantum-dot (QD)
  • Supercontinuum broadband laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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