The impact of the dielectric / semiconductor interface on microstructure and charge carrier transport in high-performance polythiophene transistors

Youngsuk Jung, R. Joseph Kline, Eric K. Lin, Daniel A. Fischer, Michael F. Toney, Martin Heeney, Iain McCulloch, Dean M. DeLongchamp

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-bjthiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry and dielectric roughness. The large and well-oriented terraced domains that are the origin of pBTTTs high performance can develop well on certain dielectrics, but can be disrupted on others.

Original languageEnglish (US)
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages113-122
Number of pages10
Volume13
Edition2
DOIs
StatePublished - 2008
Externally publishedYes
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: May 18 2008May 22 2008

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period05/18/0805/22/08

ASJC Scopus subject areas

  • Engineering(all)

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