The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner; Ivan Isakov; Anna Regoutz; David J. Payne; Thomas Anthopoulos

doi:10.1039/c6tc04907a

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors

Kornelius Tetzner^*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas Anthopoulos

^*Corresponding author for this work

Physical Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In₂O₃/ZnO heterojunction transistors, as compared to single layer In₂O₃ devices, with a maximum value of 48 cm² V^-1 s^-1

Original language	English (US)
Pages (from-to)	59-64
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	5
Issue number	1
DOIs	https://doi.org/10.1039/c6tc04907a
State	Published - Jan 1 2017

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

Access to Document

10.1039/c6tc04907a

Cite this

@article{401d901f07544f218a8047b24efeb380,

title = "The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors",

abstract = "We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1",

author = "Kornelius Tetzner and Ivan Isakov and Anna Regoutz and Payne, {David J.} and Thomas Anthopoulos",

year = "2017",

month = jan,

day = "1",

doi = "10.1039/c6tc04907a",

language = "English (US)",

volume = "5",

pages = "59--64",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "1",

}

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. / Tetzner, Kornelius; Isakov, Ivan; Regoutz, Anna; Payne, David J.; Anthopoulos, Thomas.

In: Journal of Materials Chemistry C, Vol. 5, No. 1, 01.01.2017, p. 59-64.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

AU - Tetzner, Kornelius

AU - Isakov, Ivan

AU - Regoutz, Anna

AU - Payne, David J.

AU - Anthopoulos, Thomas

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1

AB - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1

UR - http://www.scopus.com/inward/record.url?scp=85007043701&partnerID=8YFLogxK

U2 - 10.1039/c6tc04907a

DO - 10.1039/c6tc04907a

M3 - Article

AN - SCOPUS:85007043701

VL - 5

SP - 59

EP - 64

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7534

IS - 1