Abstract
We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1
Original language | English (US) |
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Pages (from-to) | 59-64 |
Number of pages | 6 |
Journal | Journal of Materials Chemistry C |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2017 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry