The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas Anthopoulos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1

Original languageEnglish (US)
Pages (from-to)59-64
Number of pages6
JournalJournal of Materials Chemistry C
Volume5
Issue number1
DOIs
StatePublished - Jan 1 2017

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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