The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Kornelius Tetzner; Ivan Isakov; Anna Regoutz; David J. Payne; Thomas Anthopoulos

doi:10.1039/c6tc04907a

The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors

Kornelius Tetzner^*, Ivan Isakov, Anna Regoutz, David J. Payne, Thomas Anthopoulos

^*Corresponding author for this work

Physical Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In₂O₃/ZnO heterojunction transistors, as compared to single layer In₂O₃ devices, with a maximum value of 48 cm² V^-1 s^-1

Original language	English (US)
Pages (from-to)	59-64
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	5
Issue number	1
DOIs	https://doi.org/10.1039/c6tc04907a
State	Published - Jan 1 2017

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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10.1039/c6tc04907a

Cite this

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title = "The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors",

abstract = "We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1",

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The impact of post-deposition annealing on the performance of solution-processed single layer In₂O₃ and isotype In₂O₃/ZnO heterojunction transistors. / Tetzner, Kornelius; Isakov, Ivan; Regoutz, Anna; Payne, David J.; Anthopoulos, Thomas.

In: Journal of Materials Chemistry C, Vol. 5, No. 1, 01.01.2017, p. 59-64.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

AU - Tetzner, Kornelius

AU - Isakov, Ivan

AU - Regoutz, Anna

AU - Payne, David J.

AU - Anthopoulos, Thomas

PY - 2017/1/1

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N2 - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1

AB - We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing conditions we demonstrate remarkable enhancement in the electron mobility of In2O3/ZnO heterojunction transistors, as compared to single layer In2O3 devices, with a maximum value of 48 cm2 V-1 s-1

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DO - 10.1039/c6tc04907a

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