The effects of X-ray irradiation-induced damage on reliability in MOS structures

Shi ho Kim*, Ho jun Lee, Chul hi Han, Kwyro Lee, Sang soo Choi, Young jin Jeon, Enzo Di Fabrizio, Massimo Gentili

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450°C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even efter forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Qbd) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Qbd in irradiated devices is enhanced electron trapping into the neutral traps.

Original languageEnglish (US)
Pages (from-to)95-99
Number of pages5
JournalSolid State Electronics
Volume38
Issue number1
DOIs
StatePublished - Jan 1 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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