The effects of metal impurities in poly[(2,5-bis(3-decylthiophen-2-yl)thieno[2,3-b]thiophene] on field-effect transistor properties

Niklas Björklund*, Jan Olof Lill, Johan Rajander, Ronald Österbacka, Steven Tierney, Martin Heeney, Iain Mcculloch, Michael Cölle

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We have used particle induced X-ray emission analysis and particle induced gamma-ray emission analysis to determine the elemental impurity concentrations in poly[(2,5-bis(3-decylthiophen-2-yl)thieno[2,3-b]thiophene] samples that have undergone different washing and extraction procedures to remove impurities. Field-effect transistors (FETs) were fabricated from the materials and their electrical characteristics show no significant differences between the devices made from different material samples. Reducing the metal residue levels below the ones measured in the starting material (300 mg/kg Fe, 7 mg/kg Zn, 3000 mg/kg Pd and 12000 mg/kg Sn) does not improve the FET performance. This suggests that it is not necessary to completely remove metal residues in the polymer for FET applications.

Original languageEnglish (US)
Pages (from-to)215-221
Number of pages7
JournalOrganic Electronics
Volume10
Issue number2
DOIs
StatePublished - Jan 1 2009

Keywords

  • Field-effect transistor
  • Nuclear analysis
  • OFET
  • PIXE
  • Purity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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