The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

H. H. Wang, J. S. Tian, C. Y. Chen, H. H. Huang, Y. C. Yeh, P. Y. Deng, L. Chang, Y. H. Chu, Y. R. Wu, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
Original languageEnglish (US)
Pages (from-to)1-8
Number of pages8
JournalIEEE Photonics Journal
Volume7
Issue number2
DOIs
StatePublished - Mar 20 2015

Fingerprint Dive into the research topics of 'The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO'. Together they form a unique fingerprint.

Cite this