The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

Cheeloon Tan, Hery Susanto Djie, C. K. Tan, V. Hongpinyo, Yunhsiang Ding, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.
Original languageEnglish (US)
Title of host publication2009 IEEE LEOS Annual Meeting Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages147-148
Number of pages2
ISBN (Print)9781424436804
DOIs
StatePublished - Oct 2009

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