The effect of interfacial roughness on the thin film morphology and charge transport of high-performance polythiophenes

Youngsuk Jung*, R. Joseph Kline, Daniel A. Fischer, R. Joseph Kline, Martin Heeney, Iain Mcculloch, Dean M. DeLongchamp

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

107 Scopus citations

Abstract

We control and vary the roughness of a dielectric upon which a high-performance polymer semiconductor, poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) (pBTTT) is cast, to determine the effects of roughness on thin-film micro-structure and the performance of organic field-effect transistors (OFETs). pBTTT forms large, well-oriented terraced domains i with high carrier mobility after it is cast upon flat, low-surface-energy substrates and heated to a mesophase. Upon dielectrics with ; root-mean square (RMS) roughness greater than 0.5 nm, we find significant morphological changes in the pBTTT active layer and significant reductions in its charge carrier mobility. The pBTTT films on rough dielectrics exhibit significantly less order than those on smooth dielectrics through characterization with atomic force microscopy and X-ray diffraction, This critical RMS roughness implies that there exists a condition at which the pBTTT domains no longer conform to the local nanometer-scale curvature of the substrate.

Original languageEnglish (US)
Pages (from-to)742-750
Number of pages9
JournalAdvanced Functional Materials
Volume18
Issue number5
DOIs
StatePublished - Mar 11 2008

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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