The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

Iman Roqan*, E. Nogales, K. P. O'Donnell, C. Trager-Cowan, R. W. Martin, G. Halambalakis, O. Briot

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

During molecular beam epitaxy of GaN:Tm films, substrate temperature strongly influences the rare earth incorporation, surface morphology and luminescence spectrum. The Tm incorporation into films grown between 730 and 830 °C was estimated by wavelength-dispersive X-ray (WDX) spectroscopy. Comparative WDX, atomic force microscopy (AFM) and cathodoluminescence (CL) mappings reveal that at an optimal growth temperature between 775 and 780 °C, a high Tm content (∼2.2 at%) and a smooth surface morphology can be obtained, leading to an intense sharp Tm3+ emission. For lower substrate temperatures, Ga droplets and large (∼8-15 μm) circular pits mar the sample surface; for higher temperatures, the sharp CL lines disappear due to low Tm content (≤0.8 at%).

Original languageEnglish (US)
Pages (from-to)4069-4072
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number18
DOIs
StatePublished - Aug 15 2008

Keywords

  • A1. Atomic force microscopy
  • A1. X-ray topography
  • A3. Molecular beam epitaxy
  • B1. Rare earth compounds
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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