The drift-diffusion limit for electron-phonon interaction in semiconductors

Peter Markowich*, Christian Schmeiser

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

A scattering operator modeling the interaction of electrons with phonons of given constant energy in semiconductors is analyzed by means of an expansion in terms of spherical harmonics. An application is the derivation of the drift-diffusion limit of the corresponding Boltzmann equation for the transport of electrons in a semiconductor crystal.

Original languageEnglish (US)
Pages (from-to)707-729
Number of pages23
JournalMathematical Models and Methods in Applied Sciences
Volume7
Issue number5
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Modeling and Simulation
  • Applied Mathematics

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