Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser

S. M. Mitani, M. S. Alias, M. R. Yahya, A. F A Mat

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report the design, growth and characterization of GaInNAs/GaAs semiconductor laser operating at 1.3 μm. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. The gain properties and threshold current of GaInNAs/GaAs quantum well structures at various temperatures are numerically investigated. The results measurements show that the GaInNAs/GaAs has a lower transparency carrier density compared to the conventional InGaAsP/InP quantum well structures for 1.3 μm semiconductor laser. The material gain at various temperatures and radiative current density as a function of quantum well and barrier are determined.

Original languageEnglish (US)
Title of host publicationProceedings - IEEE ISIE 2009, IEEE International Symposium on Industrial Electronics
Pages2208-2211
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
EventIEEE International Symposium on Industrial Electronics, IEEE ISIE 2009 - Seoul, Korea, Republic of
Duration: Jul 5 2009Jul 8 2009

Other

OtherIEEE International Symposium on Industrial Electronics, IEEE ISIE 2009
CountryKorea, Republic of
CitySeoul
Period07/5/0907/8/09

Keywords

  • GaInNAs
  • Long wavelength VCSELs
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Fingerprint Dive into the research topics of 'Temperature effect on gain and threshold current of GaInNAs-based 1.3 μm semiconductor laser'. Together they form a unique fingerprint.

Cite this