TY - JOUR
T1 - Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films
AU - Barasheed, Abeer Z.
AU - Sarath Kumar, S. R.
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2013
Y1 - 2013
N2 - In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
AB - In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
UR - http://hdl.handle.net/10754/562515
UR - http://xlink.rsc.org/?DOI=c3tc30215f
UR - http://www.scopus.com/inward/record.url?scp=84880198129&partnerID=8YFLogxK
U2 - 10.1039/c3tc30215f
DO - 10.1039/c3tc30215f
M3 - Article
VL - 1
SP - 4122
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7534
IS - 26
ER -