Temperature dependent thermoelectric properties of chemically derived gallium zinc oxide thin films

Abeer Z. Barasheed, S. R. Sarath Kumar, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

In this study, the temperature dependent thermoelectric properties of sol-gel prepared ZnO and 3% Ga-doped ZnO (GZO) thin films have been explored. The power factor of GZO films, as compared to ZnO, is improved by nearly 17% at high temperature. A stabilization anneal, prior to thermoelectric measurements, in a strongly reducing Ar/H2 (95/5) atmosphere at 500°C was found to effectively stabilize the chemically derived films, practically eliminating hysteresis during thermoelectric measurements. Subtle changes in the thermoelectric properties of stabilized films have been correlated to oxygen vacancies and excitonic levels that are known to exist in ZnO-based thin films. The role of Ga dopants and defects, formed upon annealing, in driving the observed complex temperature dependence of the thermoelectric properties is discussed. © The Royal Society of Chemistry 2013.
Original languageEnglish (US)
Pages (from-to)4122
JournalJournal of Materials Chemistry C
Volume1
Issue number26
DOIs
StatePublished - 2013

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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