TEM characterization of nickel silicide process

K. Li*, E. Eddie, S. P. Zhao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The advent of 65 nm technology makes nickel silicide finally come into the picture due to its relatively low electrical resistance and less silicon consumption. To accurately control the nickel silicide thickness and obtain the low resistance mono-silicide (NiSi) phase, characterization of each sicilidation process step is very important. This paper applies analytical TEM to characterize the nickel silicidation process. Different imaging technologies are compared and the results show that Z-contrast STEM imaging is a very good technique for the identification of different compositional layers and imaging processing also plays a very important role for image quality improvement.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages622-625
Number of pages4
DOIs
StatePublished - 2006
Externally publishedYes
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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