TEM application in the failure analysis of advanced 90 nm SOI-based IC devices

Kun Li*, E. Er, S. Zhao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here.

Original languageEnglish (US)
Title of host publicationProceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages205-208
Number of pages4
DOIs
StatePublished - Dec 1 2006
Event13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore
Duration: Jul 3 2006Jul 7 2006

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
CountrySingapore
CitySingapore
Period07/3/0607/7/06

ASJC Scopus subject areas

  • Engineering(all)

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