TDDB Reliability Improvement of Cu Damascene with a Bilayer-Structured α-SiC: H Dielectric Barrier

Chiu Chih Chiang*, Mao Chieh Chen, Zhen Cheng Wu, Lain Jong Li, Syun Ming Jang, Chen Hua Yu, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This work investigates the thermal stability and physical and barrier characteristics of two species of amorphous silicon carbide dielectric films: The nitrogen-containing α-SiCN film with a dielectric constant of 4.9 and the nitrogen-free α-SiC film with a dielectric constant of 3.8. The time-dependent-dielectric-breakdown (TDDB) lifetime of the Cu damascene metallization structure is greatly improved by using an α-SiCN/ α-SiC bilayer dielectric stack as the barrier layer. This improvement is attributed to the lower leakage current of α-SiC, absence of nitridation on the Cu surface, and better adhesion of α-SiC on Cu and organosilicate glass intermetal dielectric. Although the α-SiC film has a very low deposition rate, the α-SiCN/α-SiC bilayer dielectric is a favorable combination for the barrier layer because α-SiCN can protect α-SiC from plasma attack, such as O2 plasma attack during photoresist stripping and organosilicate plasma attack during organosilicate glass deposition.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume151
Issue number2
DOIs
StatePublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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