Tailoring magnetoresistance at the atomic level: An ab initio study

Kun Tao, V. S. Stepanyuk, I. Rungger, S. Sanvito

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.
Original languageEnglish (US)
JournalPhysical Review B
Volume85
Issue number4
DOIs
StatePublished - Jan 5 2012
Externally publishedYes

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