Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

H. C. Wen*, Husam Niman Alshareef, H. Luan, K. Choi, P. Lysaght, H. R. Harris, C. Huffman, G. A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

22 Scopus citations

Abstract

Select amorphous metals (transition-metal-silicon-nitride: TaSiN, MoSiN, HfSiN, TiSiN), were systematically evaluated for their electrical (effective work function) and physical (XRD, HRTEM, HAADF-STEM, EELS) properties. Effective work function values spanning 4.16 to 4.8 eV were observed for these materials after a 1000°C anneal and on both SiO2 and Hf based high-k dielectrics, making them attractive candidates for future generation CMOS metal gates.

Original languageEnglish (US)
Article number1469206
Pages (from-to)46-47
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
StatePublished - Dec 1 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: Jun 14 2005Jun 14 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications'. Together they form a unique fingerprint.

Cite this