Synthesis of wafer-scale ultrathin graphdiyne for flexible optoelectronic memory with over 256 storage levels

Jiaqiang Li, Zhicheng Zhang, Ya Kong, Binwei Yao, Chen Yin, Lianming Tong, Xudong Chen, Tongbu Lu, Jin Zhang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.
Original languageEnglish (US)
JournalChem
DOIs
StatePublished - Feb 26 2021

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