Synthesis of Si-Ge oxide nanowires via the transformation of Si-Ge thin films with self-assembled Au catalysts

J. H. He*, T. H. Wu, C. L. Hsin, L. J. Chen, Z. L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400°C annealing removes the surface surfactant; 800°C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally, a 1075°C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping.

Original languageEnglish (US)
Pages (from-to)G254-G257
JournalElectrochemical and Solid-State Letters
Volume8
Issue number10
DOIs
StatePublished - Oct 7 2005

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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