Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

Fei Hui, Marco A. Villena, Wenjing Fang, Ang Yu Lu, Jing Kong, Yuanyuan Shi, Xu Jing, Kaichen Zhu, Mario Lanza

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Hexagonal boron nitride (h-BN) is an attractive insulating material for nanoelectronic devices due to its high reliability as dielectric and excellent compatibility with other two dimensional (2D) materials (e.g. graphene, MoS2). Multilayer h-BN stacks have been readily grown on Cu and Pt substrates via chemical vapor deposition (CVD) approach, confirming its potential for wafer scale integration. However, the growth of h-BN on other substrates needs to be also achieved in order to expand the use of this material. Recently, the CVD growth of monolayer h-BN on Fe substrates was reported, but it just focused on material structure characterization. Here we present the first fabrication of electronic devices using multilayer h-BN dielectric stacks grown on Fe foils. We fabricate and characterize resistive switching (RS) devices based on Au/Ag/h-BN/Fe nanojunctions, and observe the coexistence of both volatile and non-volatile RS depending on the electrode to which the bias is applied. The characteristics measured agree well with those simulated via SIM2RRAM software and QPC modeling, and the cycle-to-cycle variability is slightly lower than that of transition metal oxide based RS devices.
Original languageEnglish (US)
Journal2D Materials
Volume5
Issue number3
DOIs
StatePublished - Jun 13 2018
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Materials Science(all)
  • Chemistry(all)
  • Mechanical Engineering

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