Synthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition

Yumeng Shi, Christoph Hamsen, Xiaoting Jia, Ki Kang Kim, Alfonso Reina, Mario Hofmann, Allen Long Hsu, Kai Zhang, Henan Li, Zhen Yu Juang, Mildred S. Dresselhaus, Lain-Jong Li*, Jing Kong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

807 Scopus citations

Abstract

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)4134-4139
Number of pages6
JournalNano Letters
Volume10
Issue number10
DOIs
StatePublished - Oct 13 2010

Keywords

  • Hexagonal boron nitride
  • borazine
  • chemical vapor deposition

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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