Synergy of phosphorus gettering and hydrogenation in multicrystalline silicon wafers and cells

S. Martinuzzi*, I. Périchaud, S. De Wolf, F. Warchol

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In mc-Silicon the minority carrier diffusion length (L) is improved by external getting or hydrogenation techniques. LBIC maps show that L increases except in "bad regions" which contain large densities of defects and impurities. It is proposed to use two steps: first gettering (1) then hydrogenation (2). Step (1): P diffusion at 850°C, for 20 min, from a POCl3 source, at low pressure (200 mbars), followed by a slow cool down to 700°C; step (2): post-gettering deposition of a SiN-H antireflection coating by PECVD at 350°C, followed by metallisation and firing at 700°C. After step(1) L achieves 200 to 220 μm, out of "bad regions". After a subsequent step(2) the recombination strength of extended defects is neatly reduced, especially in the bad regions, giving rise to an increase of the conversion efficiency by 1.5 to 3 percent absolute.

Original languageEnglish (US)
Pages (from-to)170-173
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - 2002
Externally publishedYes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Synergy of phosphorus gettering and hydrogenation in multicrystalline silicon wafers and cells'. Together they form a unique fingerprint.

Cite this