In mc-Silicon the minority carrier diffusion length (L) is improved by external getting or hydrogenation techniques. LBIC maps show that L increases except in "bad regions" which contain large densities of defects and impurities. It is proposed to use two steps: first gettering (1) then hydrogenation (2). Step (1): P diffusion at 850°C, for 20 min, from a POCl3 source, at low pressure (200 mbars), followed by a slow cool down to 700°C; step (2): post-gettering deposition of a SiN-H antireflection coating by PECVD at 350°C, followed by metallisation and firing at 700°C. After step(1) L achieves 200 to 220 μm, out of "bad regions". After a subsequent step(2) the recombination strength of extended defects is neatly reduced, especially in the bad regions, giving rise to an increase of the conversion efficiency by 1.5 to 3 percent absolute.
|Original language||English (US)|
|Number of pages||4|
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|State||Published - 2002|
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics