Symmetrical negative differential resistance behavior of a resistive switching device

Yuanmin Du*, Hui Pan, Shijie Wang, Tao Wu, Yuan Ping Feng, Jisheng Pan, Andrew Thye Shen Wee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

With a thin insulator sandwiched between two electrodes, the negative differential resistance (NDR) behavior has been frequently reported for its potential device applications. Here we report the experimental observation of a symmetric NDR characteristic in a resistive switching device based on TiO 2. We propose a charge storage mechanism for the NDR effect, with oxygen molecular ions working as the active source, in a thin insulating layer. Current-voltage measurements demonstrated a highly reproducible state at about 0.65 eV, and the photoelectron spectroscopy measurements showed that it complies well with the Ti3d band gap state. Our first-principle calculations confirm that charge storage and release arise from trapping and detrapping of oxygen molecular ions at the defect sites. The results and mechanism demonstrated here in a thin layer could be extended to other systems approaching molecular dimensions for device applications.

Original languageEnglish (US)
Pages (from-to)2517-2523
Number of pages7
JournalACS Nano
Volume6
Issue number3
DOIs
StatePublished - Mar 27 2012

Keywords

  • band gap state
  • charge storage
  • negative differential resistance
  • oxygen molecular ions
  • resistive switching
  • titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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