Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes

Hongping Zhao*, Guangyu Liu, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Propagation matrix method was used to calculate the surface plasmon dispersion for metal on top of InGaN/GaN quantum wells (QWs). Purcell enhancement factor related to the slope of the surface plasmon dispersion curve was calculated for metal on top of InGaN/GaN QWs. The use of double-metallic Au/Ag layers coupled to InGaN QWs results in wide-spectrum tuning of the Purcell peak enhancement of the spontaneous recombination rate for nitride lightemitting diodes.

Original languageEnglish (US)
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XIV
Volume7617
DOIs
StatePublished - 2010
Externally publishedYes
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States
Duration: Jan 26 2010Jan 28 2010

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
CountryUnited States
CitySan Francisco, CA
Period01/26/1001/28/10

Keywords

  • III-nitride
  • InGaN QWs
  • Light-emitting diodes
  • Surface plasmon LEDs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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