Surface photovoltage spectroscopy of interdiffused InAs/InGaAlAs quantum dashes-in-well structure

V. Donchev*, Ts Ivanov, Y. Wang, H. S. Djie, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We report room temperature surface photovoltage (SPV) spectroscopy studies of both as-grown and interdiffused InAs quantum dash (QD)-In-InAlGaAs quantum well (QW) structures grown by molecular beam epitaxy on (100) InP substrates. The interdiffusion is achieved by means of rapid thermal annealing at 800°C for 30 s. The SPV spectra reveal step-like structures related to the optical absorption in the QDs, QWs, InGaAlAs separate carrier confinement layer, InAlAs lower cladding layer and InP substrate. The annealing results in a high-energy shift of these spectral structures. The shift is attributed to the group-III atoms intermixing from the thermal induced interdiffusion across the heterointerfaces. The effect of interdiffusion is larger for the elements with larger surface-to-volume ratio (QDs and QWs). The blue shift of the QD transition is observed also in the photoluminescence spectra. The results contribute to the optimi zation of the technological procedure for QD bandgap tuning via the interdiffusion technique.

Original languageEnglish (US)
Pages (from-to)412-414
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number2
DOIs
StatePublished - Dec 1 2007
EventInternational Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey
Duration: Jul 30 2006Aug 4 2006

ASJC Scopus subject areas

  • Condensed Matter Physics

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