Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates

Stefaan De Wolf*, Guy Beaucarne

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

Heterostructures, such as the crystalline silicon (c-Si) /plasma-enhanced chemical vapor deposited (PECVD) hydrogenated amorphous silicon (a-Si:H) structure, form a possibility in the development of a low recombination rear contact for photovoltaic devices fabricated from p -type c-Si (p) substrates. To find a good compromise between limited charge carrier recombination at the surface and a limited resistivity of the contact, a sandwich structure, such as c-Si (p) a-Si:H (i) a-Si:H (p+) has been proposed in the past. However, in this letter, we report that whereas a very thin intrinsic a-Si:H layer (∼3 nm) may still yield very low values for the surface recombination velocity of low resistivity (0.5-1.5 Ω cm) c-Si (p) wafers, the surface passivation properties are lost when this intrinsic film is subsequently covered by a PECVD a-Si:H (p+) layer. This phenomenon suggests that surface recombination does not take place at the c-Si (p) a-Si:H (i) interface, but more likely in the defect-rich PECVD a-Si:H (p+) material, by tunneling of minority carriers through the thin a-Si:H (i) layer.

Original languageEnglish (US)
Article number022104
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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