Surface organometallic chemistry of germanium: Infrared, CP-MAS 13C solid state NMR, and analytical evidence for the formation of highly thermally stable -O-Ge(n-C4H9)3 grafted fragments by reaction of Ge(n-C4H9)3 with the surface of partially dehydroxylated alumina and silica-alumina

Christophe Nedez, Frédéric Lefebvre, Jean-Marie Maurice Basset*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Interaction of Ge(n-C4H9)4 complex with partially dehydroxylated α- and η-alumina and silica-alumina surfaces has been investigated by 13C CP-MAS NMR, infrared spectroscopy, and analytical methods. At 25 °C, Ge(n-C4H9)4 interacts, via hydrogen bonds, by its butyl ligands, with hydroxyl groups of the surface. At 250 °C, Ge(n-C4H9)4 reacts with the hydroxyl groups to form >X-O-Ge(n-C4H9)3 (X = Si, Al) and 1 mol of butane/mol of grafted germanium. When the complex is grafted on silica-alumina the germanium atom is tetracoordinated, while on alumina it could adopt a tetra- or a pentacoordination. The grafted -O-Ge(n-C4H9)3 fragments exhibit, on both silica-alumina and alumina, extraordinary high thermal stability (until 400 °C in vacuo). This phenomenon had already been observed with ≡SiOGe(n-C4H9)3 grafted on silica.

Original languageEnglish (US)
Pages (from-to)925-929
Number of pages5
JournalLangmuir
Volume12
Issue number4
StatePublished - Feb 21 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

Fingerprint

Dive into the research topics of 'Surface organometallic chemistry of germanium: Infrared, CP-MAS <sup>13</sup>C solid state NMR, and analytical evidence for the formation of highly thermally stable -O-Ge(n-C<sub>4</sub>H<sub>9</sub>)<sub>3</sub> grafted fragments by reaction of Ge(n-C<sub>4</sub>H<sub>9</sub>)<sub>3</sub> with the surface of partially dehydroxylated alumina and silica-alumina'. Together they form a unique fingerprint.

Cite this