Interaction of Ge(n-C4H9)4 complex with partially dehydroxylated α- and η-alumina and silica-alumina surfaces has been investigated by 13C CP-MAS NMR, infrared spectroscopy, and analytical methods. At 25 °C, Ge(n-C4H9)4 interacts, via hydrogen bonds, by its butyl ligands, with hydroxyl groups of the surface. At 250 °C, Ge(n-C4H9)4 reacts with the hydroxyl groups to form >X-O-Ge(n-C4H9)3 (X = Si, Al) and 1 mol of butane/mol of grafted germanium. When the complex is grafted on silica-alumina the germanium atom is tetracoordinated, while on alumina it could adopt a tetra- or a pentacoordination. The grafted -O-Ge(n-C4H9)3 fragments exhibit, on both silica-alumina and alumina, extraordinary high thermal stability (until 400 °C in vacuo). This phenomenon had already been observed with ≡SiOGe(n-C4H9)3 grafted on silica.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Feb 21 1996|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Surfaces and Interfaces