Surface Organometallic Chemistry of Germanium: Evidence for the Formation of Highly Thermally Stable ≡Si—O—GeR3 Fragments by Reaction of GeR4 Complexes (R = n-Bu, Et) with the Surface of Silica

C. Nédez, A. Choplin, Jean-Marie Maurice Basset*, E. Benazzi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Interaction between GeR4 complexes with partially dehydroxylated silica surfaces has been studied by infrared spectroscopy, 13C CP-MAS NMR, and analytical methods. The tetraalkylgermanium complexes are physisorbed, at room temperature: a hydrogen-type bonding occurs between the terminal methyl group of the alkyl ligands and the surface silanol groups. The results obtained for the two complexes (R = Et, n-Bu) and for two supports (silica200) and silica(500)) are rather similar and may be explained by a simple reaction between the surface silanols and the tetraalkylgermanium compounds: ≡Si—O—H + GeR4 →≡Si—O—GeR3 + RH. Surprisingly, thermal treatment under vacuum (10−4 Torr) of the well-defined ≡Si—O—GeR3 complex supported on silica(200) and silica(500) does not lead to any evolution of gas between 200 and 400 °C. The stabilility of the grafted complex is also evidenced by analytical data and by infrared spectroscopy. The extraordinary thermal stability of ≡Si—O—GeR3 is compatible with the higher stability of germanium alkyl complexes as compared with the tin ones. A mechanism of decomposition of the surface alkyl complexes is proposed.

Original languageEnglish (US)
Pages (from-to)1094-1098
Number of pages5
JournalInorganic Chemistry
Volume33
Issue number6
DOIs
StatePublished - Mar 1 1994

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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