Surface effects of electrode-dependent switching behavior of resistive random-access memory

Jr Jian Ke, Tzu Chiao Wei, Dung Sheng Tsai, Chun-Ho Lin, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device's switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.
Original languageEnglish (US)
Pages (from-to)131603
JournalApplied Physics Letters
Volume109
Issue number13
DOIs
StatePublished - Sep 26 2016

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