Surface effect on resistive switching behaviors of ZnO

Jr Jian Ke*, Zi Jheng Liu, Chen Fang Kang, Su Jien Lin, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

The interaction between chemisorbed oxygen adatoms (O2(ad) -) and oxygen vacancies associated with the formation/rupture of conductive filaments dominates the switching yield of ZnO, which is also confirmed by the fact that the reduction of SET/RESET voltage with the temperature. The pronounced surface effect-induced conductivity lowering due to O2(ad) - chemisorption leads to increased resistance of high resistance state (HRS). The current decay of the HRS with increased temperatures/times is owing to the severe O2(ad) - chemisorption as Joule heating is continuously applied. The statistical analysis for over 400 cells provides essential evidence for evaluating the surface effect on resistive switching.

Original languageEnglish (US)
Article number192106
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
StatePublished - Nov 7 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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