Surface-Controlled Metal Oxide Resistive Memory

Jr-Jian Ke, Kyoko Namura, Jose Ramon Duran Retamal, Chin-Hsiang Ho, Haruhiko Minamitake, Tzu-Chiao Wei, Dung-Sheng Tsai, Chun-Ho Lin, Motofumi Suzuki, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.
Original languageEnglish (US)
Pages (from-to)1307-1309
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number12
DOIs
StatePublished - Oct 28 2015

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