Surface chemical states of heteroepitaxial nitride films on sapphire by metalorganic chemical vapor deposition

Kun Li*, Z. C. Feng, C. C. Yang, J. Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga 2O 3. Si-doping appears to have small influence on the surface chemical states of GaN while the influence of Mg-doping appears larger. In addition to a change in the component intensities, Mg-doping also causes the N 1s and Ga 3d peaks to broaden. The ternary AlGaN sample shows aluminum surface segregation, while the undoped InGaN shows indium surface deficiency.

Original languageEnglish (US)
Pages (from-to)655-661
Number of pages7
JournalInternational Journal of Nanoscience
Volume3
Issue number4-5
StatePublished - Aug 1 2004

Keywords

  • GaN
  • Metalorganic chemical vapor deposition
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science (miscellaneous)
  • Electrical and Electronic Engineering

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