Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

A. G. Altynnikov, A. G. Gagarin, M. M. Gaidukov, A. V. Tumarkin, P. K. Petrov, N. Alford, A. B. Kozyrev

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6 Scopus citations

Abstract

The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).
Original languageEnglish (US)
Pages (from-to)042903
JournalApplied Physics Letters
Volume104
Issue number4
DOIs
StatePublished - Jan 27 2014
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This study was partially supported by the Ministry of Science and Education of the Russian Federation and by RFBR, research Project No. 13-02-12096 ofi-m. P. K. Petrov and N. Alford acknowledge the financial support from the EPSRC, UK (grants EP/G060940/1 and EP/H023003/1) and the King Abdullah University for Science and Technology (KAUST) Global Collaborative Research Academic Excellence Alliance (AEA) and Academic Partnership Programs (APP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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