TY - JOUR
T1 - Subthreshold Operation of Organic Electrochemical Transistors for Biosignal Amplification
AU - Venkatraman, Vishak
AU - Friedlein, Jacob T.
AU - Giovannitti, Alexander
AU - Maria, Iuliana P.
AU - McCulloch, Iain
AU - McLeod, Robert R.
AU - Rivnay, Jonathan
N1 - KAUST Repository Item: Exported on 2021-02-19
Acknowledgements: The authors acknowledge the staff support of the Northwestern's microfabrication facility (NUFAB). This work utilized the Northwestern University Micro/Nano Fabrication Facility (NUFAB), which is partially supported by the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (Grant No. NSF ECCS-1542205), the Materials Research Science and Engineering Center (Grant No. DMR-1720139), the State of Illinois, and Northwestern University. The authors also wish to acknowledge Mary J. Donahue for her assistance with the fabrication of the PEDOT:PSS-based OECT reported here. J.T.F. and R.R.M. acknowledge funding from the National Science Foundation (Grant No. ECCS 1509909).
PY - 2018/7/4
Y1 - 2018/7/4
N2 - With a host of new materials being investigated as active layers in organic electrochemical transistors (OECTs), several advantageous characteristics can be utilized to improve transduction and circuit level performance for biosensing applications. Here, the subthreshold region of operation of one recently reported high performing OECT material, poly(2-(3,3′-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2′-bithiophen]-5-yl)thieno[3,2-b]thiophene), p(g2T-TT) is investigated. The material's high subthreshold slope (SS) is exploited for high voltage gain and low power consumption. An ≈5× improvement in voltage gain (AV) for devices engineered for equal output current and 370× lower power consumption in the subthreshold region, in comparison to operation in the higher transconductance (g m), superthreshold region usually reported in the literature, are reported. Electrophysiological sensing is demonstrated using the subthreshold regime of p(g2T-TT) devices and it is suggested that operation in this regime enables low power, enhanced sensing for a broad range of bioelectronic applications. Finally, the accessibility of the subthreshold regime of p(g2T-TT) is evaluated in comparison with the prototypical poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and the role of material design in achieving favorable properties for subthreshold operation is discussed.
AB - With a host of new materials being investigated as active layers in organic electrochemical transistors (OECTs), several advantageous characteristics can be utilized to improve transduction and circuit level performance for biosensing applications. Here, the subthreshold region of operation of one recently reported high performing OECT material, poly(2-(3,3′-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2′-bithiophen]-5-yl)thieno[3,2-b]thiophene), p(g2T-TT) is investigated. The material's high subthreshold slope (SS) is exploited for high voltage gain and low power consumption. An ≈5× improvement in voltage gain (AV) for devices engineered for equal output current and 370× lower power consumption in the subthreshold region, in comparison to operation in the higher transconductance (g m), superthreshold region usually reported in the literature, are reported. Electrophysiological sensing is demonstrated using the subthreshold regime of p(g2T-TT) devices and it is suggested that operation in this regime enables low power, enhanced sensing for a broad range of bioelectronic applications. Finally, the accessibility of the subthreshold regime of p(g2T-TT) is evaluated in comparison with the prototypical poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and the role of material design in achieving favorable properties for subthreshold operation is discussed.
UR - http://hdl.handle.net/10754/628372
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/advs.201800453
UR - http://www.scopus.com/inward/record.url?scp=85050754645&partnerID=8YFLogxK
U2 - 10.1002/advs.201800453
DO - 10.1002/advs.201800453
M3 - Article
C2 - 30128254
AN - SCOPUS:85050754645
VL - 5
SP - 1800453
JO - Advanced Science
JF - Advanced Science
SN - 2198-3844
IS - 8
ER -