Subnanometer Ga 2 O 3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

Aravind Kumar Chandiran, Nicolas Tetreault, Robin Humphry-Baker, Florian Kessler, Etienne Baranoff, Chenyi Yi, Mohammad Khaja Nazeeruddin, Michael Grätzel

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157 Scopus citations

Abstract

Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga 2O 3, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO 2 conduction band and the hole injection into the electrolyte are characterized in detail. © 2012 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)3941-3947
Number of pages7
JournalNano Letters
Volume12
Issue number8
DOIs
StatePublished - Jul 6 2012
Externally publishedYes

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