Sub-terahertz testing of silicon MOSFET

W. Stillman*, D. Veksler, T. A. Elkhatib, Khaled Nabil Salama, F. Guarin, M. S. Shur

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.

Original languageEnglish (US)
Pages (from-to)1325-1327
Number of pages3
JournalElectronics Letters
Volume44
Issue number22
DOIs
StatePublished - Oct 31 2008

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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