Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO 2 /SiO 2 dielectric mirrors

Tsung Ting Kao, Yuh Shiuan Liu, Md Mahbub Satter, Xiaohang Li, Zachary Lochner, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Shyh Chiang Shen*, Jae Hyun Ryou, Alec M. Fischer, Yong Wei, Hongen Xie, Fernando A. Ponce

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an Al x Ga 1-x N-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm 2 . After employing high-reflectivity SiO 2 /HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm 2 . The internal loss and threshold modal gain can be calculated as 2 cm -1 and 10.9 cm -1 , respectively.

Original languageEnglish (US)
Article number211103
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
StatePublished - Nov 18 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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